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Additional resources for Mechanisms of Radiation Effects in the Natural Space Radiation Environment
I , ..... 60 I , 100 I I 140 TEMPERATURE (°C) Figure 37: Dependence of the change in AVot, AVit, and AVe_ with the temperature during irradiation. (After Ref. 104) For polysilicon-gate transistorsthe electric field dependenceof interface-trapbuildupis very similarto the electric field dependenceof oxide-trapcharge buildup[55,96]. Figure39  is a plot of the density of interface traps versus oxide electric field during irradiationfor nchanneltransistorsirradiatedto 500 krad(SiO2)and annealed underbias.
Figure 23  is a plot of the threshold-voltage shift due to oxide-trap charge, AVot, versus oxide electric field. The solid circles are the measured data, the open circles are the measured data adjusted for hole yield, and the dashed line is a plot of E"_. ases with approximately an E"_melectric field dependence. This is the same electric field dependence for the hole capture cross-section near the Si/SiO2 interface [47,56-60]. This indicates that the field dependence of oxide-trap charge buildup is determined primarily by the hole capture cross-section.
53) were fabricated with the oxides grown at different times. The time for 50% recovery follows approximately a to_4 thickness dependence . 4 Oxide Traps With the application of a positive gate bias, holes transport to the Si/SiO2 interface. Close to the interface there are a large number of oxide vacancies due to the out-diffusion of oxygen in the oxide  and lattice mismatch at the surface. These oxide vacancies can act as trapping centers. As holes approach the interface, some fraction of the holes will become trapped.
Mechanisms of Radiation Effects in the Natural Space Radiation Environment