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I , ..... 60 I , 100 I I 140 TEMPERATURE (°C) Figure 37: Dependence of the change in AVot, AVit, and AVe_ with the temperature during irradiation. (After Ref. 104) For polysilicon-gate transistorsthe electric field dependenceof interface-trapbuildupis very similarto the electric field dependenceof oxide-trapcharge buildup[55,96]. Figure39 [55] is a plot of the density of interface traps versus oxide electric field during irradiationfor nchanneltransistorsirradiatedto 500 krad(SiO2)and annealed underbias.

Figure 23 [55] is a plot of the threshold-voltage shift due to oxide-trap charge, AVot, versus oxide electric field. The solid circles are the measured data, the open circles are the measured data adjusted for hole yield, and the dashed line is a plot of E"_. ases with approximately an E"_melectric field dependence. This is the same electric field dependence for the hole capture cross-section near the Si/SiO2 interface [47,56-60]. This indicates that the field dependence of oxide-trap charge buildup is determined primarily by the hole capture cross-section.

53) were fabricated with the oxides grown at different times. The time for 50% recovery follows approximately a to_4 thickness dependence [53]. 4 Oxide Traps With the application of a positive gate bias, holes transport to the Si/SiO2 interface. Close to the interface there are a large number of oxide vacancies due to the out-diffusion of oxygen in the oxide [54] and lattice mismatch at the surface. These oxide vacancies can act as trapping centers. As holes approach the interface, some fraction of the holes will become trapped.

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Mechanisms of Radiation Effects in the Natural Space Radiation Environment


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